| PART |
Description |
Maker |
| V58C2128164S V58C2128404S V58C2128804S |
HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM 高性能2.528兆位DDR SDRAM内存
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| OX16C950 OX16C950-PCC60-B OX16C950-TQC60-B |
High Performance UART with 128 byte FIFOs
|
Oxford Semiconductor
|
| AM29PL320DB60R AM29PL320DT90 AM29PL320DB70 AM29PL3 |
32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory 1M X 32 FLASH 3V PROM, 60 ns, PBGA84
32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory 32兆位米16 1个M × 32位）的CMOS 3.0伏，不仅具备高性能页面模式闪存
|
Spansion, Inc.
Spansion Inc.
Advanced Micro Devices
|
| V43648Z04VCTG-75 |
3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V436516Z04VTG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
|
| V58C2256 V58C2256164S V58C2256404S V58C2256804S |
HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| V436664S24V V436664S24VXTG-75PC V436664S24VXTG-10P |
3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
Mosel Vitelic Corp
|
| V436416S04VCTG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V826516K04S |
2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| V43728S04VCTG-75 |
3.3 VOLT 8M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
